1 μm process
(Redirected from 1 µm process)
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MOSFET scaling (process nodes) |
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The 1 μm process (1 micrometer process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,[1][2] by companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).
The 1 μm process refers to the minimum size that could be reliably produced. The smallest transistors and other circuit elements on a chip made with this process were around 1 micrometer wide.
The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.[3]
Products featuring 1.0 μm manufacturing process
[edit | edit source]- NTT introduced the 1 μm process for its DRAM memory chips, including its 64k in 1979 and 256k in 1980.[4]
- NEC's 1 Mbit DRAM memory chip was manufactured with the 1 μm process in 1984.[5]
- Intel 80386 CPU launched in 1985 was manufactured using this process.[1]
- Intel uses this process on the CHMOS III-E technology.[6]
- Intel uses this process on the CHMOS IV technology.[7]
References
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- ^ Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14
- ^ Intel Corporation, "New Product Focus: Components: New ASSP Suits Mobile Applications", Microcomputer Solutions, September/October 1990, page 11
External links
[edit | edit source]| Preceded by 1.5 μm process |
MOSFET semiconductor device fabrication process | Succeeded by 800 nm process |
