Read-mostly memory
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Read-mostly memory (RMM) is a type of memory that can be read fast, but written to only slowly.
Historically, the term was used to refer to different types of memory over time:
In 1970, it was used by Intel and Energy Conversion Devices to refer to a new type of amorphous and crystalline nonvolatile and reprogrammable semiconductor memory (phase-change memory aka PCM/PRAM).[1][2] However, it was also used to refer to reprogrammable memory (REPROM)[3] and magnetic-core memory.[4]
The term has mostly fallen into disuse, but is sometimes used referring to electrically erasable programmable read-only (EEPROM) or flash memory today.[5]
See also
[edit | edit source]- Read-only memory (ROM)
- Read–write memory (R/W)
- Programmable read-only memory (PROM)
- Random-access memory (RAM)
References
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Further reading
[edit | edit source]- United States 4199692A, "Amorphous non-volatile ram"