Polycide
Jump to navigation
Jump to search
This article relies largely or entirely on a single source. (December 2009) |
Polycide[1] is a silicide formed over polysilicon. Widely used in DRAMs. In a polycide MOSFET transistor process, the silicide is formed only over the polysilicon film as formation occurs prior to any polysilicon etch. Polycide processes contrast with salicide processes in which silicide is formed after the polysilicon etch. Thus, with a salicide process, silicide is formed over both the polysilicon gate and the exposed monocrystalline terminal regions of the transistor in a self-aligned fashion.
References
[edit | edit source]- ^ Lua error in Module:Citation/CS1/Configuration at line 2172: attempt to index field '?' (a nil value).
 | This chemistry-related article is a stub. You can help Wikipedia by expanding it. |