File:Charge-state model of VRT diagram.svg
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Size of this PNG preview of this SVG file: 257 × 335 pixels. Other resolutions: 184 × 240 pixels | 368 × 480 pixels | 589 × 768 pixels | 785 × 1,024 pixels | 1,571 × 2,048 pixels.
Original file (SVG file, nominally 257 × 335 pixels, file size: 100 KB)
Summary
| Description |
English: Diagram of a Mosfet zooming on the gate drain overlap region, highlighting the interaction between a defect located in the gate oxide with a defect at the SI/SiO2 interface also called interface state. |
| Date | |
| Source |
Mechanism of random telegraph noise in junction leakage current of metal-oxide semiconductor field-effect transistor, Journal of Applied Physics 111, 104513 (2012); doi: 10.1063/1.4721658 |
| Author | Yuki Mori, et al. |
Licensing
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This image of simple geometry is ineligible for copyright and therefore in the public domain, because it consists entirely of information that is common property and contains no original authorship. |  |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 13:20, 9 July 2025 | | 257 × 335 (100 KB) | wikimediacommons>Shiny-bit | Uploaded a work by Yuki Mori, et al. from Mechanism of random telegraph noise in junction leakage current of metal-oxide semiconductor field-effect transistor, Journal of Applied Physics 111, 104513 (2012); doi: 10.1063/1.4721658 with UploadWizard |
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